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ZnS thin films were prepared on glass substrate at various deposition conditions by a HW apparatus and were systematically investigated the growth characteristics, in terms of deposition rates, absorption edges by a double beam spectro-photometer, and structural analysis by a x-ray diffraction The deposition rates were increased with increasing the cell temperature and vapor pressure of sulfur, but were decreased with increasing substrate temperature. The optical characteristics of thin films depends on the deposition rates. The band gap energies of 3.46~3.52eV measured at room temperature are smaller than the theoretical value of 3.54eV, indicating that impurities exist in the crystal. All ZnS thin films are oriented in the (111) principal direction of a zincblende structure. By introducing the S vapor, optical and crystalline properties have been improved. |
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