마이크로파용 고효율 Doherty 전력증폭기 설계 |
오정균, 김동옥 |
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A Design of High Efficiency Doherty Power Amplifier for Microwave Applications |
Jeong-Kyun Oh, Dong-Ok Kim |
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Abstract |
In this paper, the high efficiency Doherty power amplifier has been designed and realized for microwave applications. The Doherty amplifier has been implemented using silicon MRF 281 LDMOS FET. The RF performances of the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias-tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone. The realized Doherty power amplifier P1dB output power has 33dBm at 2.3GHz frequency. Also the Doherty power amplifier shows lldB gain and -17.8dB input return loss at 2.3GHz to 2.4GHz. The designed Doherty amplifier has been improved the average PAE by 10% higher efficiency than a class AB amplifier alone. The Maximum PAE of designed Doherty power amplifier has been 39%. |
Key Words:
Microwave;Power amplifier;Doherty amplifier;Efficiency;PAE |